Optically excited THz generation from ordered arrays of GaAs nanowires

V. N. Trukhin; A. D. Bouravleuv; I. A. Mustafin; J. P. Kakko; H. Lipsanen

doi:10.1016/j.proeng.2017.09.674

Optically excited THz generation from ordered arrays of GaAs nanowires

V. N. Trukhin
, A. D. Bouravleuv
, I. A. Mustafin^*
, J. P. Kakko
, H. Lipsanen

^*Corresponding author for this work

Ioffe Institute
St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
RAS - St. Petersburg Academic University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Web of Science)

237 Downloads (Pure)

Abstract

THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

Original language	English
Title of host publication	3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia
Publisher	Elsevier
Pages	100-104
Number of pages	5
Volume	201
DOIs	https://doi.org/10.1016/j.proeng.2017.09.674
Publication status	Published - 2017
MoE publication type	A4 Conference publication
Event	International Conference on Information Technology and Nanotechnology - Samara, Russian Federation Duration: 25 Apr 2017 → 27 Apr 2017 Conference number: 3

Publication series

Name	Procedia Engineering
ISSN (Electronic)	1877-7058

Conference

Conference	International Conference on Information Technology and Nanotechnology
Abbreviated title	ITNT
Country/Territory	Russian Federation
City	Samara
Period	25/04/2017 → 27/04/2017

Keywords

GaAs
III-V semiconductors
leaky mods
light absorption
MOVPE
nanowires
NWs
Terahertz generation
THz

Access to Document

10.1016/j.proeng.2017.09.674Licence: CC BY-NC-ND

trukhin-et-al-procedia_engineeringFinal published version, 714 KBLicence: CC BY-NC-ND

Cite this

Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Kakko, J. P., & Lipsanen, H. (2017). Optically excited THz generation from ordered arrays of GaAs nanowires. In 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia (Vol. 201, pp. 100-104). (Procedia Engineering). Elsevier. https://doi.org/10.1016/j.proeng.2017.09.674

@inproceedings{d265f68a26c34e23bd515ad677b98998,

title = "Optically excited THz generation from ordered arrays of GaAs nanowires",

abstract = "THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.",

keywords = "GaAs, III-V semiconductors, leaky mods, light absorption, MOVPE, nanowires, NWs, Terahertz generation, THz",

author = "Trukhin, \{V. N.\} and Bouravleuv, \{A. D.\} and Mustafin, \{I. A.\} and Kakko, \{J. P.\} and H. Lipsanen",

year = "2017",

doi = "10.1016/j.proeng.2017.09.674",

language = "English",

volume = "201",

series = "Procedia Engineering",

publisher = "Elsevier",

pages = "100--104",

booktitle = "3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia",

address = "Netherlands",

note = "International Conference on Information Technology and Nanotechnology, ITNT ; Conference date: 25-04-2017 Through 27-04-2017",

}

Trukhin, VN, Bouravleuv, AD, Mustafin, IA, Kakko, JP & Lipsanen, H 2017, Optically excited THz generation from ordered arrays of GaAs nanowires. in 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia. vol. 201, Procedia Engineering, Elsevier, pp. 100-104, International Conference on Information Technology and Nanotechnology, Samara, Russian Federation, 25/04/2017. https://doi.org/10.1016/j.proeng.2017.09.674

Optically excited THz generation from ordered arrays of GaAs nanowires. / Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A. et al.
3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia. Vol. 201 Elsevier, 2017. p. 100-104 (Procedia Engineering).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Optically excited THz generation from ordered arrays of GaAs nanowires

AU - Trukhin, V. N.

AU - Bouravleuv, A. D.

AU - Mustafin, I. A.

AU - Kakko, J. P.

AU - Lipsanen, H.

N1 - Conference code: 3

PY - 2017

Y1 - 2017

N2 - THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

AB - THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

KW - GaAs

KW - III-V semiconductors

KW - leaky mods

KW - light absorption

KW - MOVPE

KW - nanowires

KW - NWs

KW - Terahertz generation

KW - THz

UR - https://www.scopus.com/pages/publications/85033456460

U2 - 10.1016/j.proeng.2017.09.674

DO - 10.1016/j.proeng.2017.09.674

M3 - Conference article in proceedings

AN - SCOPUS:85033456460

VL - 201

T3 - Procedia Engineering

SP - 100

EP - 104

BT - 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia

PB - Elsevier

T2 - International Conference on Information Technology and Nanotechnology

Y2 - 25 April 2017 through 27 April 2017

ER -

Optically excited THz generation from ordered arrays of GaAs nanowires

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this