Optical properties of self-organized InGaAs/InP dots

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

The possibility to tune the emission wavelength and to reduce the linewidth of self-organized dots is studied. Thin layers of In0.5Ga0.5As was selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.

Details

Original languageEnglish
Title of host publicationSeventh International Conference on Indium Phosphide and Related Materials, 1995
Publication statusPublished - 1995
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Indium Phosphide and Related Materials - Sapporo, Japan
Duration: 9 May 199513 May 1995
Conference number: 7

Conference

ConferenceInternational Conference on Indium Phosphide and Related Materials
Abbreviated titleIPRM
CountryJapan
CitySapporo
Period09/05/199513/05/1995

ID: 5546512