Optical properties of self-organized InGaAs/InP dots

J. Ahopelto*, H. Lipsanen, M. Sopanen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The possibility to tune the emission wavelength and to reduce the linewidth of self-organized dots is studied. Thin layers of In0.5Ga0.5As was selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.

    Original languageEnglish
    Title of host publicationSeventh International Conference on Indium Phosphide and Related Materials, 1995
    PublisherIEEE
    Pages311-314
    Number of pages4
    ISBN (Print)0-7803-2147-2
    DOIs
    Publication statusPublished - 1995
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Indium Phosphide and Related Materials - Sapporo, Japan
    Duration: 9 May 199513 May 1995
    Conference number: 7

    Conference

    ConferenceInternational Conference on Indium Phosphide and Related Materials
    Abbreviated titleIPRM
    CountryJapan
    CitySapporo
    Period09/05/199513/05/1995

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