Projects per year
Abstract
Optical modification is a fast, cost-effective, and scalable approach to tailoring the physical properties of two-dimensional (2D) materials for various applications. However, most previous efforts have focused on modifying individual 2D materials, which fails to utilize the method to its fullest potential. In this paper, heterostructures composed of hBN-capped molybdenum ditelluride (MoTe2) and molybdenum disulfide (MoS2) are optically modified with a continuous wave laser. The process simultaneously thins MoS2 and induces clustering of tellurium atoms from the ablated MoTe2. These structural changes result in significant enhancements of the physical properties, including a 43-fold increase in MoS2 photoluminescence and the transformation of the heterojunction into an anti-ambipolar transistor. These findings highlight a previously unutilized pathway to tune the heterostructure properties for applications in novel electronics and optoelectronics.
Original language | English |
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Pages (from-to) | 4379-4385 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 25 |
Issue number | 11 |
DOIs | |
Publication status | Published - 19 Mar 2025 |
MoE publication type | A1 Journal article-refereed |
Keywords
- 2D materials
- anti-ambipolar transistor
- defect engineering
- laser patterning
- optical modification
- ternary inverter
- transition metal dichalcogenides
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DoD T40311: Self-Programmable Metasurface Networks for Wireless Communications and IoT
Sun, Z. (Principal investigator)
01/01/2025 → 31/12/2028
Project: Academy of Finland: Other research funding
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Optically Engineered Moiré Quantum Materials: Optically Engineered Moiré Quantum Materials
Sun, Z. (Principal investigator)
01/11/2024 → 31/10/2027
Project: Academy of Finland: Other research funding
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Alice: Atomic-scale nonlinear optical interferometers
Sun, Z. (Principal investigator)
01/09/2024 → 31/08/2028
Project: Academy of Finland: Other research funding