Optical Characterization of III-V Multijunction Solar Cells for Temperature-Independent Band Gap Features

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Optical Characterization of III-V Multijunction Solar Cells for Temperature-Independent Band Gap Features. / Baumgartner, H.; Oksanen, B.; Kärhä, P.; Ikonen, E.

In: IEEE Journal of Photovoltaics, Vol. 9, No. 6, 11.2019, p. 1631-1636.

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@article{26da36c550754f02a1b4fe154c02c5aa,
title = "Optical Characterization of III-V Multijunction Solar Cells for Temperature-Independent Band Gap Features",
abstract = "A recently developed method to characterize the band gap energies of III-V optosemiconductors was utilized to determine temperature-invariant band gap features of multijunction solar cells. The method is based on measuring electroluminescent spectra of the solar cells at different temperatures. The normalized spectra reveal temperature-invariant energy values of the different junctions which are further converted to band gap energies. The method utilization requires a calibrated spectroradiometer and a temperature controlled mounting base for the solar cell under test, however, no knowledge about the absolute temperature of the cell under measurement. The method was tested on GaAs and GaInP solar cells that consist of single and dual junctions. The band gap energies were also derived from spectral response measurements. The differences of the determined band gap energies from the literature values were smaller than 1.1{\%}. Compared with other band gap determination methods, the developed method yields temperature-invariant band gap characteristics; with a known uncertainty, that separated the different junctions in a multijunction device without individual biasing for the different junctions. In addition, a temperature-independent characterization parameter ensures that the operating conditions of the device under test do not affect the results.",
keywords = "Band gap, light-emitting diode (LED), spectral response, temperature, III-V solar cells",
author = "H. Baumgartner and B. Oksanen and P. K{\"a}rh{\"a} and E. Ikonen",
year = "2019",
month = "11",
doi = "10.1109/JPHOTOV.2019.2933190",
language = "English",
volume = "9",
pages = "1631--1636",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
number = "6",

}

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TY - JOUR

T1 - Optical Characterization of III-V Multijunction Solar Cells for Temperature-Independent Band Gap Features

AU - Baumgartner, H.

AU - Oksanen, B.

AU - Kärhä, P.

AU - Ikonen, E.

PY - 2019/11

Y1 - 2019/11

N2 - A recently developed method to characterize the band gap energies of III-V optosemiconductors was utilized to determine temperature-invariant band gap features of multijunction solar cells. The method is based on measuring electroluminescent spectra of the solar cells at different temperatures. The normalized spectra reveal temperature-invariant energy values of the different junctions which are further converted to band gap energies. The method utilization requires a calibrated spectroradiometer and a temperature controlled mounting base for the solar cell under test, however, no knowledge about the absolute temperature of the cell under measurement. The method was tested on GaAs and GaInP solar cells that consist of single and dual junctions. The band gap energies were also derived from spectral response measurements. The differences of the determined band gap energies from the literature values were smaller than 1.1%. Compared with other band gap determination methods, the developed method yields temperature-invariant band gap characteristics; with a known uncertainty, that separated the different junctions in a multijunction device without individual biasing for the different junctions. In addition, a temperature-independent characterization parameter ensures that the operating conditions of the device under test do not affect the results.

AB - A recently developed method to characterize the band gap energies of III-V optosemiconductors was utilized to determine temperature-invariant band gap features of multijunction solar cells. The method is based on measuring electroluminescent spectra of the solar cells at different temperatures. The normalized spectra reveal temperature-invariant energy values of the different junctions which are further converted to band gap energies. The method utilization requires a calibrated spectroradiometer and a temperature controlled mounting base for the solar cell under test, however, no knowledge about the absolute temperature of the cell under measurement. The method was tested on GaAs and GaInP solar cells that consist of single and dual junctions. The band gap energies were also derived from spectral response measurements. The differences of the determined band gap energies from the literature values were smaller than 1.1%. Compared with other band gap determination methods, the developed method yields temperature-invariant band gap characteristics; with a known uncertainty, that separated the different junctions in a multijunction device without individual biasing for the different junctions. In addition, a temperature-independent characterization parameter ensures that the operating conditions of the device under test do not affect the results.

KW - Band gap

KW - light-emitting diode (LED)

KW - spectral response

KW - temperature

KW - III-V solar cells

U2 - 10.1109/JPHOTOV.2019.2933190

DO - 10.1109/JPHOTOV.2019.2933190

M3 - Article

VL - 9

SP - 1631

EP - 1636

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

IS - 6

ER -

ID: 36779891