Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

D. Gogova, D. Siche, R. Fornari, B. Monemar, P. Gibart, L. Dobos, B. Pecz, F. Tuomisto, R. Bayazitov, G. Zollo

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)
Original languageEnglish
Pages (from-to)702-708
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 3 Apr 2006
MoE publication typeA1 Journal article-refereed

Keywords

  • AlN
  • GaN
  • HVPE

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