Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Research units


Original languageEnglish
Title of host publicationThe XXVII Annual Conference of the Finnish Physical Society, Turku, March 18-20, 1993
Publication statusPublished - 1993
MoE publication typeA4 Article in a conference publication

    Research areas

  • compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping

ID: 5035605