Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy

K. Hjelt, M. Sopanen, H. Lipsanen, T. Tuomi, S. Hasenöhrl

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationThe XXVII Annual Conference of the Finnish Physical Society, Turku, March 18-20, 1993
    PublisherThe Finnish Physical Society
    Pagespaper 25:15
    Publication statusPublished - 1993
    MoE publication typeA4 Article in a conference publication


    • compound semiconductors
    • liquid phase epitaxy (LPE)
    • praseodymium dioxide doping

    Cite this