Optical and electrical properties of Be doped GaN bulk crystals

T. Suski, E. Litwin-Staszewska, P. Perlin, P. Wisniewski, H. Teisseyre, I. Grzegory, M. Bockowski, S. Porowski, K. Saarinen, J. Nissilä

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalJournal of Crystal Growth
Volume230
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • positron

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