Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy

Afrina Khanam, Jonatan Slotte, Filip Tuomisto, Subhali Subhechha, Mihaela Popovici, Gouri Sankar Kar

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Abstract

Positron annihilation signals from VMCO-like samples grown by atomic layer deposition at different temperatures are utilized for the characterization of differences in open volume defects in TiN/TiO2/a-Si heterostructures. Doppler and coincidence Doppler mode of positron annihilation spectroscopy combined with a monoenergetic positron beam were used for this study. Differences observed in the Doppler parameters indicate differences in the positron trapping states of the TiO2 epilayers grown at different temperatures. Furthermore, the coincidence-Doppler results show that these differences cannot be due to intermixing of the TiO2 and a-Si layers and formation of thin SiO2 layers at the interface during the growth process. The results indicate that the amount of open volume defects in the TiO2 layer of the VMCO-structure seems to increase with an increase in the growth temperature.
Original languageEnglish
Article number245301
Number of pages6
JournalJournal of Applied Physics
Volume131
Issue number24
DOIs
Publication statusPublished - 24 Jun 2022
MoE publication typeA1 Journal article-refereed

Keywords

  • PAS
  • Open volume defect
  • TIO2 FILM

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