On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure

P.J. McNally, G. Dilliway, J.M. Bonar, A. Willoughby, T. Tuomi, R. Rantamäki, A.N. Danilewsky, D. Lowney

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1644-1646
    JournalApplied Physics Letters
    Issue number77
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Keywords

    • dislocations
    • silicon-germanium
    • strain
    • synchrotron x-ray topography

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