On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

Xuwen Liu; Eero Haimi; Simo-Pekka Hannula; Oili M. E. Ylivaara; Riikka L. Puurunen

doi:10.1116/1.4842655

On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

Xuwen Liu, Eero Haimi, Simo-Pekka Hannula, Oili M. E. Ylivaara, Riikka L. Puurunen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

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Original language	English
Article number	01A116
Pages (from-to)	1-6
Number of pages	6
Journal	JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A
Volume	32
Issue number	1
DOIs	https://doi.org/10.1116/1.4842655
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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title = "On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition",

author = "Xuwen Liu and Eero Haimi and Simo-Pekka Hannula and Ylivaara, {Oili M. E.} and Puurunen, {Riikka L.}",

year = "2014",

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language = "English",

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T1 - On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

AU - Liu, Xuwen

AU - Haimi, Eero

AU - Hannula, Simo-Pekka

AU - Ylivaara, Oili M. E.

AU - Puurunen, Riikka L.

PY - 2014

Y1 - 2014

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U2 - 10.1116/1.4842655

DO - 10.1116/1.4842655

M3 - Article

SN - 0734-2101

VL - 32

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EP - 6

JO - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

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IS - 1

M1 - 01A116

ER -

On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

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On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

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