On the origin of strain relaxation in epitaxial CdZnO layers

A. Redondo-Cubero*, J. Rodrigues, M. Brandt, P. Schäfer, F. Henneberger, M. R. Correia, T. Monteiro, E. Alves, K. Lorenz

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


The origin of a double peak, detected by X-ray diffraction (XRD), in a wurtzite CdxZn1-xO (x=0.17) epilayer, is investigated using Rutherford backscattering spectrometry in channeling geometry (RBS/C). In-depth compositional characterization by RBS/C demonstrates that strain relaxation does not take place via compositional phase separation and does not cause any compositional pulling effects. On the contrary, RBS/C angular scans demonstrate that relaxation is a consequence of progressive structural changes during the heteroepitaxial growth of the film on MgZnO, likely due to the large distortion of the lattice induced by the high Cd content.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventOxide-Based Materials and Devices - San Francisco, United States
Duration: 3 Feb 20136 Feb 2013
Conference number: 4


ConferenceOxide-Based Materials and Devices
CountryUnited States
CitySan Francisco


  • CdZnO
  • Phase separation
  • Rutherford backscattering spectrometry
  • Strain
  • X-ray diffraction

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