On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy

E.-M. Pavelescu, J. Slotte, V.D.S. Dhaka, K. Saarinen, S. Antohe, Gh. Cimpoca, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)33-37
JournalJournal of Crystal Growth
Volume297
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Keywords

  • Photoluminescence, Point defects, Positron annihilation, X-ray Diffraction, Molecular beam epitaxy, Dilute nitrides

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