@article{8c0ec68b10fe4aedabfbf319973a7bf5,
title = "On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy",
keywords = "Photoluminescence, Point defects, Positron annihilation, X-ray Diffraction, Molecular beam epitaxy, Dilute nitrides, Photoluminescence, Point defects, Positron annihilation, X-ray Diffraction, Molecular beam epitaxy, Dilute nitrides, Photoluminescence, Point defects, Positron annihilation, X-ray Diffraction, Molecular beam epitaxy, Dilute nitrides",
author = "E.-M. Pavelescu and J. Slotte and V.D.S. Dhaka and K. Saarinen and S. Antohe and Gh. Cimpoca and M. Pessa",
year = "2006",
language = "English",
volume = "297",
pages = "33--37",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}