On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

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On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes. / Emelianov, A. V.; Romashkin, A. V.; Tsarik, K. A.; Nasibulin, A. G.; Nevolin, V. K.; Bobrinetskiy, Ivan.

In: Semiconductors, Vol. 51, No. 4, 01.04.2017, p. 488-491.

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Emelianov, A. V. ; Romashkin, A. V. ; Tsarik, K. A. ; Nasibulin, A. G. ; Nevolin, V. K. ; Bobrinetskiy, Ivan. / On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes. In: Semiconductors. 2017 ; Vol. 51, No. 4. pp. 488-491.

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@article{ef12b9e62ad941f9ab537b309a70083b,
title = "On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes",
abstract = "This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga+ ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm2/(V s) at an on/off current ratio of 5 × 102.",
author = "Emelianov, {A. V.} and Romashkin, {A. V.} and Tsarik, {K. A.} and Nasibulin, {A. G.} and Nevolin, {V. K.} and Ivan Bobrinetskiy",
year = "2017",
month = "4",
day = "1",
doi = "10.1134/S1063782617040030",
language = "English",
volume = "51",
pages = "488--491",
journal = "Semiconductors",
issn = "1063-7826",
number = "4",

}

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TY - JOUR

T1 - On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

AU - Emelianov, A. V.

AU - Romashkin, A. V.

AU - Tsarik, K. A.

AU - Nasibulin, A. G.

AU - Nevolin, V. K.

AU - Bobrinetskiy, Ivan

PY - 2017/4/1

Y1 - 2017/4/1

N2 - This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga+ ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm2/(V s) at an on/off current ratio of 5 × 102.

AB - This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga+ ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm2/(V s) at an on/off current ratio of 5 × 102.

UR - http://www.scopus.com/inward/record.url?scp=85017820212&partnerID=8YFLogxK

U2 - 10.1134/S1063782617040030

DO - 10.1134/S1063782617040030

M3 - Article

VL - 51

SP - 488

EP - 491

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 12973273