On the formation of vacancy defects in III-nitride semiconductors

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Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalJournal of Crystal Growth
Volume350
Issue number1
Publication statusPublished - 1 Jul 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • AlN, GaN, InN, positron, vacancy

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