@article{2d9a310acc694220b52f44f60d62f952,
title = "On the formation of vacancy defects in III-nitride semiconductors",
keywords = "AlN, GaN, InN, positron, vacancy, AlN, GaN, InN, positron, vacancy, AlN, GaN, InN, positron, vacancy",
author = "F. Tuomisto and J.-M. M{\"a}ki and C. Rauch and I. Makkonen",
year = "2012",
month = jul,
day = "1",
doi = "10.1016/j.jcrysgro.2011.12.031",
language = "English",
volume = "350",
pages = "93--97",
journal = "Journal of Crystal Growth",
issn = "1873-5002",
publisher = "Elsevier",
number = "1",
}