On the formation of vacancy defects in III-nitride semiconductors

F. Tuomisto, J.-M. Mäki, C. Rauch, I. Makkonen

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)
Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalJournal of Crystal Growth
Volume350
Issue number1
DOIs
Publication statusPublished - 1 Jul 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • AlN
  • GaN
  • InN
  • positron
  • vacancy

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