On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

G. Yu Vasileva; Yu B. Vasilyev; S. N. Novikov; S. N. Danilov; S. D. Ganichev

doi:10.1134/S1063782618080225

On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

G. Yu Vasileva
, Yu B. Vasilyev^*
, S. N. Novikov
, S. N. Danilov
, S. D. Ganichev

^*Corresponding author for this work

Department of Electronics and Nanoengineering

Ioffe Institute
University of Regensburg

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

Original language	English
Pages (from-to)	1077-1081
Number of pages	5
Journal	Semiconductors
Volume	52
Issue number	8
DOIs	https://doi.org/10.1134/S1063782618080225
Publication status	Published - 1 Aug 2018
MoE publication type	A1 Journal article-refereed

Funding

ACKNOWLEDGMENTS The work was carried out under financial support of the Russian Foundation for Basic Research (grant no. 16-02-00854) and the German Research Foundation (Deutsche Forschungsgemeinschaft, DFG) (projects nos. SFB 1277-А04 and GRK1570).

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abstract = "A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.",

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AU - Vasilyev, Yu B.

AU - Novikov, S. N.

AU - Danilov, S. N.

AU - Ganichev, S. D.

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AB - A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

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On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

Abstract

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