On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • G. Yu Vasileva
  • Yu B. Vasilyev
  • S. N. Novikov
  • S. N. Danilov
  • S. D. Ganichev

Research units

  • Ioffe Institute
  • University of Regensburg

Abstract

A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

Details

Original languageEnglish
Pages (from-to)1077-1081
Number of pages5
JournalSemiconductors
Volume52
Issue number8
Publication statusPublished - 1 Aug 2018
MoE publication typeA1 Journal article-refereed

ID: 27085822