On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
Research output: Contribution to journal › Article
- Ioffe Institute
- University of Regensburg
A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
|Number of pages||5|
|Publication status||Published - 1 Aug 2018|
|MoE publication type||A1 Journal article-refereed|