On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

G. Yu Vasileva, Yu B. Vasilyev*, S. N. Novikov, S. N. Danilov, S. D. Ganichev

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

Original languageEnglish
Pages (from-to)1077-1081
Number of pages5
JournalSemiconductors
Volume52
Issue number8
DOIs
Publication statusPublished - 1 Aug 2018
MoE publication typeA1 Journal article-refereed

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  • Cite this

    Vasileva, G. Y., Vasilyev, Y. B., Novikov, S. N., Danilov, S. N., & Ganichev, S. D. (2018). On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. Semiconductors, 52(8), 1077-1081. https://doi.org/10.1134/S1063782618080225