On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

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On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si : P Epitaxial Films for Source-Drain Stressor Applications. / Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Loo, Roger; Vandervorst, Wilfried.

In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 5, 2018, p. P228-P237.

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Dhayalan, Sathish Kumar ; Kujala, Jiri ; Slotte, Jonatan ; Pourtois, Geoffrey ; Simoen, Eddy ; Rosseel, Erik ; Hikavyy, Andriy ; Shimura, Yosuke ; Loo, Roger ; Vandervorst, Wilfried. / On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si : P Epitaxial Films for Source-Drain Stressor Applications. In: ECS Journal of Solid State Science and Technology. 2018 ; Vol. 7, No. 5. pp. P228-P237.

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@article{512d46779ccd4f908cc3de25acbaf50b,
title = "On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications",
abstract = "Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (",
keywords = "DOPED SILICON, CHANNEL FINFETS, MOBILITY, DEVICES",
author = "Dhayalan, {Sathish Kumar} and Jiri Kujala and Jonatan Slotte and Geoffrey Pourtois and Eddy Simoen and Erik Rosseel and Andriy Hikavyy and Yosuke Shimura and Roger Loo and Wilfried Vandervorst",
year = "2018",
doi = "10.1149/2.0071805jss",
language = "English",
volume = "7",
pages = "P228--P237",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8777",
number = "5",

}

RIS - Download

TY - JOUR

T1 - On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si

T2 - P Epitaxial Films for Source-Drain Stressor Applications

AU - Dhayalan, Sathish Kumar

AU - Kujala, Jiri

AU - Slotte, Jonatan

AU - Pourtois, Geoffrey

AU - Simoen, Eddy

AU - Rosseel, Erik

AU - Hikavyy, Andriy

AU - Shimura, Yosuke

AU - Loo, Roger

AU - Vandervorst, Wilfried

PY - 2018

Y1 - 2018

N2 - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

AB - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

KW - DOPED SILICON

KW - CHANNEL FINFETS

KW - MOBILITY

KW - DEVICES

U2 - 10.1149/2.0071805jss

DO - 10.1149/2.0071805jss

M3 - Article

VL - 7

SP - P228-P237

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8777

IS - 5

ER -

ID: 29743201