On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Sathish Kumar Dhayalan
  • Jiri Kujala
  • Jonatan Slotte

  • Geoffrey Pourtois
  • Eddy Simoen
  • Erik Rosseel
  • Andriy Hikavyy
  • Yosuke Shimura
  • Roger Loo
  • Wilfried Vandervorst

Research units

  • IMEC Vzw
  • University of Antwerp
  • Ghent University

Abstract

Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

Details

Original languageEnglish
Pages (from-to)P228-P237
Number of pages10
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number5
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • DOPED SILICON, CHANNEL FINFETS, MOBILITY, DEVICES

Download statistics

No data available

ID: 29743201