TY - JOUR
T1 - On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si
T2 - P Epitaxial Films for Source-Drain Stressor Applications
AU - Dhayalan, Sathish Kumar
AU - Kujala, Jiri
AU - Slotte, Jonatan
AU - Pourtois, Geoffrey
AU - Simoen, Eddy
AU - Rosseel, Erik
AU - Hikavyy, Andriy
AU - Shimura, Yosuke
AU - Loo, Roger
AU - Vandervorst, Wilfried
PY - 2018
Y1 - 2018
N2 - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (
AB - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (
KW - DOPED SILICON
KW - CHANNEL FINFETS
KW - MOBILITY
KW - DEVICES
U2 - 10.1149/2.0071805jss
DO - 10.1149/2.0071805jss
M3 - Article
VL - 7
SP - P228-P237
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8777
IS - 5
ER -