Abstract
Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (
Original language | English |
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Pages (from-to) | P228-P237 |
Number of pages | 10 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 7 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2018 |
MoE publication type | A1 Journal article-refereed |
Keywords
- DOPED SILICON
- CHANNEL FINFETS
- MOBILITY
- DEVICES