On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

Sathish Kumar Dhayalan*, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Roger Loo, Wilfried Vandervorst

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

Original languageEnglish
Pages (from-to)P228-P237
Number of pages10
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number5
DOIs
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • DOPED SILICON
  • CHANNEL FINFETS
  • MOBILITY
  • DEVICES

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