On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

Sathish Kumar Dhayalan; Jiri Kujala; Jonatan Slotte; Geoffrey Pourtois; Eddy Simoen; Erik Rosseel; Andriy Hikavyy; Yosuke Shimura; Roger Loo; Wilfried Vandervorst

doi:10.1149/2.0071805jss

On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

Sathish Kumar Dhayalan^*, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Roger Loo, Wilfried Vandervorst

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

Original language	English
Pages (from-to)	P228-P237
Number of pages	10
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	5
DOIs	https://doi.org/10.1149/2.0071805jss
Publication status	Published - 2018
MoE publication type	A1 Journal article-refereed

Keywords

DOPED SILICON
CHANNEL FINFETS
MOBILITY
DEVICES

Access to Document

10.1149/2.0071805jss

ECS J. Solid State Sci. Technol.-2018-Dhayalan-P228-37Final published version, 1.24 MBLicence: CC BY-NC-ND

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Dhayalan, S. K., Kujala, J., Slotte, J., Pourtois, G., Simoen, E., Rosseel, E., Hikavyy, A., Shimura, Y., Loo, R., & Vandervorst, W. (2018). On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications. ECS Journal of Solid State Science and Technology, 7(5), P228-P237. https://doi.org/10.1149/2.0071805jss

@article{512d46779ccd4f908cc3de25acbaf50b,

title = "On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications",

abstract = "Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (",

keywords = "DOPED SILICON, CHANNEL FINFETS, MOBILITY, DEVICES",

author = "Dhayalan, {Sathish Kumar} and Jiri Kujala and Jonatan Slotte and Geoffrey Pourtois and Eddy Simoen and Erik Rosseel and Andriy Hikavyy and Yosuke Shimura and Roger Loo and Wilfried Vandervorst",

year = "2018",

doi = "10.1149/2.0071805jss",

language = "English",

volume = "7",

pages = "P228--P237",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society",

number = "5",

}

Dhayalan, SK, Kujala, J, Slotte, J, Pourtois, G, Simoen, E, Rosseel, E, Hikavyy, A, Shimura, Y, Loo, R & Vandervorst, W 2018, 'On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications', ECS Journal of Solid State Science and Technology, vol. 7, no. 5, pp. P228-P237. https://doi.org/10.1149/2.0071805jss

On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications. / Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan et al.
In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 5, 2018, p. P228-P237.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si

T2 - P Epitaxial Films for Source-Drain Stressor Applications

AU - Dhayalan, Sathish Kumar

AU - Kujala, Jiri

AU - Slotte, Jonatan

AU - Pourtois, Geoffrey

AU - Simoen, Eddy

AU - Rosseel, Erik

AU - Hikavyy, Andriy

AU - Shimura, Yosuke

AU - Loo, Roger

AU - Vandervorst, Wilfried

PY - 2018

Y1 - 2018

N2 - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

AB - Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

KW - DOPED SILICON

KW - CHANNEL FINFETS

KW - MOBILITY

KW - DEVICES

U2 - 10.1149/2.0071805jss

DO - 10.1149/2.0071805jss

M3 - Article

SN - 2162-8769

VL - 7

SP - P228-P237

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

ER -

On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

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Keywords

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