On cracking in thick GaN layers grown on sapphire substrates

M. G. Mynbaeva*, A. A. Sitnikova, A. N. Smirnov, K. D. Mynbaev, H. Lipsanen, A. Kremleva, D. A. Bauman, V. E. Bougrov, A. E. Romanov

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalMaterials Physics and Mechanics
Volume44
Issue number1
DOIs
Publication statusPublished - 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • defects
  • cracking
  • Hydride vapor phase epitaxy
  • RAYLEIGH INSTABILITIES
  • MECHANISM
  • STRAIN

Cite this

Mynbaeva, M. G., Sitnikova, A. A., Smirnov, A. N., Mynbaev, K. D., Lipsanen, H., Kremleva, A., Bauman, D. A., Bougrov, V. E., & Romanov, A. E. (2020). On cracking in thick GaN layers grown on sapphire substrates. Materials Physics and Mechanics, 44(1), 1-7. https://doi.org/10.18720/MPM.4412020_1