On cracking in thick GaN layers grown on sapphire substrates

M. G. Mynbaeva; A. A. Sitnikova; A. N. Smirnov; K. D. Mynbaev; H. Lipsanen; A. Kremleva; D. A. Bauman; V. E. Bougrov; A. E. Romanov

doi:10.18720/MPM.4412020_1

On cracking in thick GaN layers grown on sapphire substrates

M. G. Mynbaeva^*, A. A. Sitnikova, A. N. Smirnov, K. D. Mynbaev, H. Lipsanen, A. Kremleva, D. A. Bauman, V. E. Bougrov, A. E. Romanov

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Materials Physics and Mechanics
Volume	44
Issue number	1
DOIs	https://doi.org/10.18720/MPM.4412020_1
Publication status	Published - 2020
MoE publication type	A1 Journal article-refereed

Keywords

GaN
defects
cracking
Hydride vapor phase epitaxy
RAYLEIGH INSTABILITIES
MECHANISM
STRAIN

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10.18720/MPM.4412020_1

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title = "On cracking in thick GaN layers grown on sapphire substrates",

abstract = "Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.",

keywords = "GaN, defects, cracking, Hydride vapor phase epitaxy, RAYLEIGH INSTABILITIES, MECHANISM, STRAIN",

author = "Mynbaeva, {M. G.} and Sitnikova, {A. A.} and Smirnov, {A. N.} and Mynbaev, {K. D.} and H. Lipsanen and A. Kremleva and Bauman, {D. A.} and Bougrov, {V. E.} and Romanov, {A. E.}",

year = "2020",

doi = "10.18720/MPM.4412020_1",

language = "English",

volume = "44",

pages = "1--7",

journal = "Materials Physics and Mechanics",

issn = "1605-2730",

publisher = "Russian Academy of Sciences",

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TY - JOUR

T1 - On cracking in thick GaN layers grown on sapphire substrates

AU - Mynbaeva, M. G.

AU - Sitnikova, A. A.

AU - Smirnov, A. N.

AU - Mynbaev, K. D.

AU - Lipsanen, H.

AU - Kremleva, A.

AU - Bauman, D. A.

AU - Bougrov, V. E.

AU - Romanov, A. E.

PY - 2020

Y1 - 2020

N2 - Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.

AB - Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.

KW - GaN

KW - defects

KW - cracking

KW - Hydride vapor phase epitaxy

KW - RAYLEIGH INSTABILITIES

KW - MECHANISM

KW - STRAIN

U2 - 10.18720/MPM.4412020_1

DO - 10.18720/MPM.4412020_1

M3 - Article

SN - 1605-2730

VL - 44

SP - 1

EP - 7

JO - Materials Physics and Mechanics

JF - Materials Physics and Mechanics

IS - 1

ER -

On cracking in thick GaN layers grown on sapphire substrates

Abstract

Keywords

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