Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Lappeenranta University of Technology
  • RAS - Ioffe Physico Technical Institute

Abstract

In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

Details

Original languageEnglish
Article number012031
Pages (from-to)1-6
Number of pages6
JournalJournal of Physics: Conference Series
Volume661
Issue number1
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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