Observation of defect complexes containing Ga vacancies in GaAsN

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Abstract

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.

Details

Original languageEnglish
Pages (from-to)40-42
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • compound semiconductor, dilute nitrides, metalorganic vapor phase epitaxy, positron spectroscopy, vacancy

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