Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M. L. Green*, A. J. Allen, X. Li, J. Wang, J. Ilavsky, A. Delabie, R. L. Puurunen, B. Brijs

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

Original languageEnglish
Article number032907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number3
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

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