Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M. L. Green; A. J. Allen; X. Li; J. Wang; J. Ilavsky; A. Delabie; R. L. Puurunen; B. Brijs

doi:10.1063/1.2164417

Nucleation of atomic-layer-deposited HfO ₂ films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M. L. Green^*, A. J. Allen, X. Li, J. Wang, J. Ilavsky, A. Delabie, R. L. Puurunen, B. Brijs

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

Original language	English
Article number	032907
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2164417
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.2164417

Cite this

@article{428b67baf33242d192d2e0d5a6309a56,

title = "Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation",

abstract = "We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.",

author = "Green, {M. L.} and Allen, {A. J.} and X. Li and J. Wang and J. Ilavsky and A. Delabie and Puurunen, {R. L.} and B. Brijs",

year = "2006",

doi = "10.1063/1.2164417",

language = "English",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "3",

}

Nucleation of atomic-layer-deposited HfO ₂ films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation. / Green, M. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B.

In: Applied Physics Letters, Vol. 88, No. 3, 032907, 2006, p. 1-3.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

AU - Green, M. L.

AU - Allen, A. J.

AU - Li, X.

AU - Wang, J.

AU - Ilavsky, J.

AU - Delabie, A.

AU - Puurunen, R. L.

AU - Brijs, B.

PY - 2006

Y1 - 2006

N2 - We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

AB - We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

UR - http://www.scopus.com/inward/record.url?scp=31144448961&partnerID=8YFLogxK

U2 - 10.1063/1.2164417

DO - 10.1063/1.2164417

M3 - Article

AN - SCOPUS:31144448961

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032907

ER -

Nucleation of atomic-layer-deposited HfO ₂ films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this