N-Type induced junction black silicon photodiode for UV detection

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • Helsinki Institute of Physics

Abstract

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency. Recently, we realized a near-ideal silicon photodiode that exhibits an external quantum efficiency above 95% over the wavelength range of 235-980 nm, exceeds 100% below 300nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a "black silicon" nanostructured surface having dimensions proportional to the wavelength of light to be detected and 2) using an induced junction for signal collection instead of a conventional doped p-n junction, virtually eliminating Auger recombination at the light entry surface. This recombination prevention is especially important in ultraviolet detection since ultraviolet photons are absorbed very close to device surface, where conventional photodiodes have high doping concentration causing loss of signal, but induced junction diode is able to collect virtually all charge carriers generated. In this paper, we analyse the performance of our photodiodes under ultraviolet radiation.

Details

Original languageEnglish
Title of host publicationIntegrated Photonics: Materials, Devices, and Applications IV
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication
EventIntegrated Photonics: Materials, Devices, and Applications - Barcelona, Spain
Duration: 9 May 201710 May 2017

Publication series

NameProceedings of SPIE
Volume10249
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceIntegrated Photonics: Materials, Devices, and Applications
CountrySpain
CityBarcelona
Period09/05/201710/05/2017

    Research areas

  • Alumina, Black silicon, Ideal photodiode, Induced junction, Nanostructure, Photodiode, Quantum efficiency, Silicon, Ultraviolet photodiode

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