N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

Research output: Contribution to journalArticle

Researchers

Research units

  • Massachusetts Institute of Technology
  • University of Tsukuba

Abstract

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics

Details

Original languageEnglish
Article number101002
Number of pages4
JournalAPPLIED PHYSICS EXPRESS
Volume11
Issue number10
Publication statusPublished - Oct 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • ELECTRON-MOBILITY TRANSISTORS, MOVPE GROWTH, GAN, FACE, DEPOSITION, CARBON

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