Abstract
Self-diffusion along the [112] Shockley parital dislocation pair (self-pipe-diffusion) in Au is studied with Nosé-Hoover molecular dynamics (MD) using the many-atom Ackland-Tichy-Vitek-Finnis model. We find the following formation energy difference between interstitials (i) and vacancies (v) at partial dislocations: ΔEf=Ef(i)-Ef(v)=1.3 eV. Thermal disorder in the stacking fault region makes it difficult (or even impossible) to follow the migration of single vacancies or interstitials sufficiently long times in the temperature range 0.78Tm. . . Tm (Tm=1475 K is the melting temperature). The diffusion induced by one vacancy and one interstitial calculated at the temperature range 1150–1400 K gives the following migration energies: Em(v)=0.75 eV and Em(i)≊0.0 eV. Since the activation energy for interstitials is about 0.5 eV larger than that for vacancies, self-pipe-diffusion is more vacancy type than interstitial type. The components of the induced diffusion constants indicate the spread of diffusion into the whole stacking fault region.
| Original language | English |
|---|---|
| Pages (from-to) | 6450-6452 |
| Journal | Physical Review B |
| Volume | 50 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1994 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- diffusion
- molecular dynamics
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