Nonlinear optical absorption properties of InP nanowires and applications as a saturable absorber

Junting Liu, Hongkun Nie, Bingzheng Yan, Kejian Yang, He Yang, Vladislav Khayrudinov, Harri Lipsanen, Baitao Zhang*, Jingliang He

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Indium phosphide (InP) nanowires (NWs) have attracted significant attention due to their exotic properties that are different from the bulk counterparts, and have been widely used for light generation, amplification, detection, modulation, and switching, etc. Here, high-quality InP NWs were directly grown on a quartz substrate by the Au-nanoparticle assisted vapor-liquid-solid method. We thoroughly studied their nonlinear optical absorption properties at 1.06 mu m by the open-aperture Z-scan method. Interestingly, a transition phenomenon from saturable absorption (SA) to reverse saturable absorption (RSA) was observed with the increase of the incident laser intensity. In the analysis, we found that the effective nonlinear absorption coefficient (beta(eff) similar to -10(2) cm/MW) under the SA process was 3 orders of magnitude larger than that during the RSA processes. Furthermore, the SA properties of InP NWs were experimentally verified by using them as a saturable absorber for a passively Q-switched Nd:YVO4 solid-state laser at 1.06 mu m, where the shortest pulse width of 462 ns and largest single pulse energy of 1.32 mu J were obtained. Moreover, the ultrafast carrier relaxation dynamics were basically studied, and the intraband and inter-band ultrafast carrier relaxation times of 8.1 and 63.8 ps, respectively, were measured by a degenerate pump-probe method with the probe laser of 800 nm. These results well demonstrate the nonlinear optical absorption properties, which show the excellent light manipulating capabilities of InP NWs and pave a way for their applications in ultrafast nanophotonic devices. (C) 2020 Chinese Laser Press

Original languageEnglish
Pages (from-to)1035-1041
Number of pages7
JournalPhotonics Research
Volume8
Issue number6
DOIs
Publication statusPublished - 1 Jun 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • BAND-GAP
  • GRAPHENE
  • DEFECTS

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