Noise measurements on single electron transistors using bias switching read-out

P. J. Hakonen, M. Kiviranta, J. S. Penttilä, M. A. Paalanen

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)227-229
Number of pages3
JournalEUROPEAN PHYSICAL JOURNAL: APPLIED PHYSICS
Volume11
Issue number3
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Keywords

  • single electron devices, Cloulomb blockade, single-electron tunneling

Cite this