Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Jori Lemettinen*, Nadim Chowdhury, Hironori Okumura, Iurii Kim, Sami Suihkonen, Tomas Palacios

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)


This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 μm exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1× 104. The maximum drain current was stable between 20 °C and 250 °C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.

Original languageEnglish
Article number8741077
Pages (from-to)1245-1248
Number of pages4
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 1 Aug 2019
MoE publication typeA1 Journal article-refereed


  • aluminum-gallium-nitride
  • nitrogen-polar
  • polarization doping
  • Ultrawide-bandgap

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