New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • A. Bouravleuv
  • I. Ilkiv
  • R. Reznik
  • K. Kotlyar
  • I. Soshnikov
  • G. Cirlin
  • P. Brunkov
  • D. Kirilenko
  • L. Bondarenko
  • A. Nepomnyaschiy
  • D. Gruznev
  • A. Zotov
  • A. Saranin
  • Veer Dhaka
  • Harri Lipsanen

Research units

  • St. Petersburg Academic University
  • Ioffe Institute
  • Institute for Analytical Instrumentation
  • St. Petersburg State Electrotechnical University
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Institute of Automation and Control Processes FEB RAS

Abstract

We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

Details

Original languageEnglish
Article number045602
Number of pages12
JournalNanotechnology
Volume29
Issue number4
Publication statusPublished - 2017
MoE publication typeA1 Journal article-refereed

ID: 16809557