New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

Jenni Harjuoja; Timo Hatanpää; Marko Vehkamäki; Samuli Väyrynen; Matti Putkonen; Lauri Niinistö; Mikko Ritala; Markku Leskelä; Eero Rauhala

New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

Jenni Harjuoja, Timo Hatanpää, Marko Vehkamäki, Samuli Väyrynen, Matti Putkonen, Lauri Niinistö, Mikko Ritala, Markku Leskelä, Eero Rauhala

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Original language	English
Pages (from-to)	362-367
Journal	Chemical Vapor Deposition
Volume	11
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

ALD
Atomic Layer Deposition
Bismuth Silicate
Crystal structure
New precursor
thin film

Cite this

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title = "New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon",

keywords = "ALD, Atomic Layer Deposition, Bismuth Silicate, Crystal structure, New precursor, thin film, ALD, Atomic Layer Deposition, Bismuth Silicate, Crystal structure, New precursor, thin film, ALD, Atomic Layer Deposition, Bismuth Silicate, Crystal structure, New precursor, thin film",

author = "Jenni Harjuoja and Timo Hatanp{\"a}{\"a} and Marko Vehkam{\"a}ki and Samuli V{\"a}yrynen and Matti Putkonen and Lauri Niinist{\"o} and Mikko Ritala and Markku Leskel{\"a} and Eero Rauhala",

year = "2005",

language = "English",

volume = "11",

pages = "362--367",

journal = "Chemical Vapor Deposition",

issn = "1521-3862",

publisher = "Wiley",

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TY - JOUR

T1 - New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

AU - Harjuoja, Jenni

AU - Hatanpää, Timo

AU - Vehkamäki, Marko

AU - Väyrynen, Samuli

AU - Putkonen, Matti

AU - Niinistö, Lauri

AU - Ritala, Mikko

AU - Leskelä, Markku

AU - Rauhala, Eero

PY - 2005

Y1 - 2005

KW - ALD

KW - Atomic Layer Deposition

KW - Bismuth Silicate

KW - Crystal structure

KW - New precursor

KW - thin film

KW - ALD

KW - Atomic Layer Deposition

KW - Bismuth Silicate

KW - Crystal structure

KW - New precursor

KW - thin film

KW - ALD

KW - Atomic Layer Deposition

KW - Bismuth Silicate

KW - Crystal structure

KW - New precursor

KW - thin film

UR - http://www3.interscience.wiley.com/cgi-bin/fulltext/112091767/PDFSTART

UR - https://www.scopus.com/pages/publications/27944503567

M3 - Article

SN - 1521-3862

VL - 11

SP - 362

EP - 367

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

ER -

New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

Keywords

Other files and links

CCDC 253458: Experimental Crystal Structure Determination

Cite this

New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

Keywords

Other files and links

Datasets

CCDC 253458: Experimental Crystal Structure Determination

Cite this