New approach to ALD of bismuth silicates; Bi(CH2SiMe3)3 acting as a precursor for both bismuth and silicon

Jenni Harjuoja, Timo Hatanpää, Marko Vehkamäki, Samuli Väyrynen, Matti Putkonen, Lauri Niinistö, Mikko Ritala, Markku Leskelä, Eero Rauhala

    Research output: Contribution to journalArticleScientificpeer-review

    16 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)362-367
    JournalChemical Vapor Deposition
    Volume11
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Keywords

    • ALD
    • Atomic Layer Deposition
    • Bismuth Silicate
    • Crystal structure
    • New precursor
    • thin film

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