Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)

A. Vehanen*, J. Makinen, P. Hautojarvi, H. Huomo, J. Lahtinen, R. M. Nieminen, S. Valkealahti

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)
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We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.

Original languageEnglish
Pages (from-to)7561-7563
Number of pages3
JournalPhysical Review B
Issue number11
Publication statusPublished - 1 Dec 1985
MoE publication typeA1 Journal article-refereed

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