Near-bandedge absorption and positron trapping under illumination in semi-insulating GaAs: role of As vacancies

C. LeBerre, C. Corbel, R. Mih, M.R. Brozel, S. Tuzemen, S. Kuisma, K. Saarinen, P. Hautojärvi, R. Fornari

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed


  • near-bandedge absorption
  • positron

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