Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Standard

Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. / Feng, T.; Xie, D.; Zang, Y.; Wu, X.; Luo, Y.; Ren, T.; Bosund, M.; Li, S.; Airaksinen, V.-M.; Lipsanen, H.; Honkanen, S.

2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. IEEE, 2011. p. 1-2.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Feng, T, Xie, D, Zang, Y, Wu, X, Luo, Y, Ren, T, Bosund, M, Li, S, Airaksinen, V-M, Lipsanen, H & Honkanen, S 2011, Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. IEEE, pp. 1-2, IEEE International Conference of Electron Devices and Solid-State Circuits, Tianjin , China, 17/11/2011. https://doi.org/10.1109/EDSSC.2011.6117648

APA

Feng, T., Xie, D., Zang, Y., Wu, X., Luo, Y., Ren, T., ... Honkanen, S. (2011). Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 (pp. 1-2). IEEE. https://doi.org/10.1109/EDSSC.2011.6117648

Vancouver

Feng T, Xie D, Zang Y, Wu X, Luo Y, Ren T et al. Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. IEEE. 2011. p. 1-2 https://doi.org/10.1109/EDSSC.2011.6117648

Author

Feng, T. ; Xie, D. ; Zang, Y. ; Wu, X. ; Luo, Y. ; Ren, T. ; Bosund, M. ; Li, S. ; Airaksinen, V.-M. ; Lipsanen, H. ; Honkanen, S. / Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. IEEE, 2011. pp. 1-2

Bibtex - Download

@inproceedings{d12ca14daee14dd4aa3445180fd7c676,
title = "Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization",
author = "T. Feng and D. Xie and Y. Zang and X. Wu and Y. Luo and T. Ren and M. Bosund and S. Li and V.-M. Airaksinen and H. Lipsanen and S. Honkanen",
year = "2011",
doi = "10.1109/EDSSC.2011.6117648",
language = "English",
isbn = "978-1-4577-1998-1",
pages = "1--2",
booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",
publisher = "IEEE",

}

RIS - Download

TY - GEN

T1 - Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

AU - Feng, T.

AU - Xie, D.

AU - Zang, Y.

AU - Wu, X.

AU - Luo, Y.

AU - Ren, T.

AU - Bosund, M.

AU - Li, S.

AU - Airaksinen, V.-M.

AU - Lipsanen, H.

AU - Honkanen, S.

PY - 2011

Y1 - 2011

UR - http://dx.doi.org/10.1109/EDSSC.2011.6117648

U2 - 10.1109/EDSSC.2011.6117648

DO - 10.1109/EDSSC.2011.6117648

M3 - Conference contribution

SN - 978-1-4577-1998-1

SP - 1

EP - 2

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

PB - IEEE

ER -

ID: 665321