Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

  • T. Feng
  • D. Xie
  • Y. Zang
  • X. Wu
  • Y. Luo
  • T. Ren
  • M. Bosund
  • S. Li
  • V.-M. Airaksinen
  • Harri Lipsanen

  • S. Honkanen

Research units

  • Tsinghua University
  • McGill University
  • University of Electronic Science and Technology of China

Details

Original languageEnglish
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
EventIEEE International Conference of Electron Devices and Solid-State Circuits - Tianjin , China
Duration: 17 Nov 201118 Nov 2011

Conference

ConferenceIEEE International Conference of Electron Devices and Solid-State Circuits
Abbreviated titleEDSSC
CountryChina
CityTianjin
Period17/11/201118/11/2011

ID: 665321