Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

T. Feng, D. Xie, Y. Zang, X. Wu, Y. Luo, T. Ren, M. Bosund, S. Li, V.-M. Airaksinen, H. Lipsanen, S. Honkanen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
PublisherIEEE
Pages1-2
Number of pages2
ISBN (Electronic)978-1-4577-1996-7
ISBN (Print)978-1-4577-1998-1
DOIs
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
EventIEEE International Conference of Electron Devices and Solid-State Circuits - Tianjin , China
Duration: 17 Nov 201118 Nov 2011

Conference

ConferenceIEEE International Conference of Electron Devices and Solid-State Circuits
Abbreviated titleEDSSC
CountryChina
CityTianjin
Period17/11/201118/11/2011

Cite this

Feng, T., Xie, D., Zang, Y., Wu, X., Luo, Y., Ren, T., Bosund, M., Li, S., Airaksinen, V-M., Lipsanen, H., & Honkanen, S. (2011). Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 (pp. 1-2). IEEE. https://doi.org/10.1109/EDSSC.2011.6117648