Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

L. Kilanski, A. Zubiaga, F. Tuomisto, W. Dobrowolski, V. Domukhovski, S. Varnavskiy, S.F. Marenkin

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We have studied vacancy defects in chalcopyrite semimagnetic semiconducting mixed Zn1−x(Mn,Co)xGeAs2 bulk crystals with alloy composition x varying between 0.052 to 0.182 using positron annihilation spectroscopy. We identified As vacancies, potentially complexed with the transition metal alloying elements, in all the studied samples, while no cation vacancy related defects were detected. The positron lifetimes for the bulk ZnGeAs2 lattice and neutral As vacancy were determined to be τB=220–230 ps and τAs=300±10 ps, respectively. Our results also show that the p-type conductivity in the samples is not due to cation vacancy related acceptor centers. The As vacancies were found to be present at such low concentrations that they cannot be responsible for the compensation of the p-type conductivity or the reduction of mobility in the Zn1−x(Mn,Co)xGeAs2 samples.
Original languageEnglish
Article number013524
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed


  • chalcopyrite
  • positron
  • vacancy


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