Nanowire oligomer waveguide modes towards reduced lasing threshold

Henrik Mäntynen*, Nicklas Anttu, Harri Lipsanen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
11 Downloads (Pure)

Abstract

Semiconductor nanowires offer a promising route of realizing nanolasers for the next generation of chip-scale optoelectronics and photonics applications. Established fabrication methods can produce vertical semiconductor nanowires which can themselves act both as a gain medium and as a Fabry–Pérot cavity for feedback. The lasing threshold in such nanowire lasers is affected by the modal confinement factor and end facet reflectivities, of which the substrate end reflectivity tends to be limited due to small refractive index contrast between the nanowire and substrate. These modal properties, however, also depend strongly on the modal field profiles. In this work, we use numerical simulations to investigate waveguide modes in vertical nanowire oligomers (that is, arrangements of few vertical nanowires close to each other) and their modal properties compared to single nanowire monomers. We solve for the oligomer waveguide eigenmodes which are understood as arising from interaction of monomer modes and further compute the reflectivity of these modes at the end facets of the nanowires. We consider either the nanowires or an additional coating layer as the gain medium. We show that both types of oligomers can exhibit modes with modal properties leading to reduced lasing threshold and also give directions for further research on the topic.

Original languageEnglish
Article number5510
Pages (from-to)1-21
Number of pages21
JournalMaterials
Volume13
Issue number23
DOIs
Publication statusPublished - 1 Dec 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • Guided mode
  • Lasing threshold
  • Oligomer
  • Semiconductor nanowire
  • Waveguide

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