Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

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Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to <1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.[Figure not available: see fulltext.]


Original languageEnglish
Pages (from-to)2657-2666
Number of pages10
JournalNano Research
Issue number8
Early online date14 Mar 2017
Publication statusPublished - Aug 2017
MoE publication typeA1 Journal article-refereed

    Research areas

  • annealing, antireflection, GaAs, light emitting diode (LED), metallo-organic vapor phase epitaxy (MOVPE), parylene-C

ID: 11425433