Abstract
Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to <1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.[Figure not available: see fulltext.]
Original language | English |
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Pages (from-to) | 2657-2666 |
Number of pages | 10 |
Journal | Nano Research |
Volume | 10 |
Issue number | 8 |
Early online date | 14 Mar 2017 |
DOIs | |
Publication status | Published - Aug 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- annealing
- antireflection
- GaAs
- light emitting diode (LED)
- metallo-organic vapor phase epitaxy (MOVPE)
- parylene-C
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