Nanoscale deformation of GaAs affected by silicon doping

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • University of Silesia in Katowice


Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.


Original languageEnglish
Pages (from-to)1127-1130
Number of pages4
JournalActa Physica Polonica A
Issue number4
Publication statusPublished - 1 Oct 2016
MoE publication typeA1 Journal article-refereed

ID: 10618413