Nanoscale deformation of GaAs affected by silicon doping

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Researchers

Research units

  • University of Silesia in Katowice

Abstract

Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.

Details

Original languageEnglish
Pages (from-to)1127-1130
Number of pages4
JournalActa Physica Polonica A
Volume130
Issue number4
Publication statusPublished - 1 Oct 2016
MoE publication typeA1 Journal article-refereed

ID: 10618413