Nanoscale deformation of GaAs affected by silicon doping
Research output: Contribution to journal › Article › Scientific › peer-review
- University of Silesia in Katowice
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
|Number of pages||4|
|Journal||Acta Physica Polonica A|
|Publication status||Published - 1 Oct 2016|
|MoE publication type||A1 Journal article-refereed|