Nanoscale deformation of GaAs affected by silicon doping

A. Majtyka, R. Nowak, D. Chrobak*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.

Original languageEnglish
Pages (from-to)1127-1130
Number of pages4
JournalActa Physica Polonica A
Volume130
Issue number4
DOIs
Publication statusPublished - 1 Oct 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

Dive into the research topics of 'Nanoscale deformation of GaAs affected by silicon doping'. Together they form a unique fingerprint.

Cite this