Nano-indentation of ion-beam modified HfN/Si system: Identification of the amorphized inter-layer

R. Nowak, C. L. Li, T. Okada, F Yoshida

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The work aims to clarify the considerable softening registered for the HfN/Si system after its bombardment with energetic ions (E=1, 2.5 and 5 MeV, fluence=10(14) Au++ cm(-2)). The mechanical properties of the virgin and ion-modified films were characterized using the depth-sensing indentation experiments performed under maximum indentation load ranging from 2 to 50 mN. The surface deformation in the vicinity of the contact with a triangular indenter was modeled by the finite element simulation of the axisymmetric-indenter penetration into the hard-film/soft-substrate system. The applied approach allowed us to attribute the observed difference in hardness of virgin and ion-treated samples to the structural changes which have been induced in the silicon substrate by bombarding ions. The calculated results led us to the conclusion that bombardment with energetic Au-ions resulted in formation of the interlayer of amorphous silicon, right under HFN film. The present work aims to prove that the depth-sensing experiments supplemented by the finite-element calculations provide a new, powerful method of characterizing the multilayer structures. (C) 1999 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)110-115
Number of pages6
JournalNUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume148
Issue number1-4
DOIs
Publication statusPublished - Jan 1999
MoE publication typeA1 Journal article-refereed
EventInternational Conference on Ion Beam Modification of Materials - Amsterdam, Netherlands
Duration: 31 Aug 19984 Sep 1998
Conference number: 11

Keywords

  • indentation
  • finite-element simulation
  • amorphization
  • surface deformation
  • ion bombardment
  • THIN-FILMS
  • SILICON
  • REDUCTION
  • COATINGS
  • BEHAVIOR
  • STRESS
  • TIN

Cite this