N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

Jori Lemettinen*, Hironori Okumura, Tomas Palacios, Sami Suihkonen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)
64 Downloads (Pure)

Abstract

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics

Original languageEnglish
Article number101002
Number of pages4
JournalAPPLIED PHYSICS EXPRESS
Volume11
Issue number10
DOIs
Publication statusPublished - Oct 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • ELECTRON-MOBILITY TRANSISTORS
  • MOVPE GROWTH
  • GAN
  • FACE
  • DEPOSITION
  • CARBON

Cite this