Abstract
We show that it is possible to construct low-noise single-electron transistors (SETs) using free-standing multiwalled carbon nanotubes. The 1/fα-noise of our devices, 6×10−6e/Hz⎯⎯⎯⎯⎯√ at 45 Hz, is close in the performance to the best metallic SETs of today.
Original language | English |
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Pages (from-to) | 3295-3297 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2001 |
MoE publication type | A1 Journal article-refereed |
Keywords
- atomic force microscope
- carbon nanotube
- nanoelectronic